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Proceedings Paper

Simulation of spontaneous emission in apertured microcavities
Author(s): Benjamin Daniel Klein; Karl Hess; Dennis G. Deppe
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Paper Abstract

It has been established both theoretically and experimentally that semiconductor microcavities are capable of modifying the spontaneous emission rate of electron-hole pairs within the microcavity. In particular, the microcavity may be used to re- shape the spectral distribution of radiation from a dipole source in order to enhance emission at certain frequencies and suppress emission other frequencies. It is desirable to exploit this effect to increase the efficiency of LEDs and SLDs. Numerical calculation may be used to evaluate the magnitude of the modification of spontaneous emission in practical microcavity structures. The Green's function based VCSEL mode solver we have developed is uniquely well-suited for such calculations. The method we have employed for calculating spontaneous emission rates in microcavities is presented, along with calculated results and comparisons with experimental data.

Paper Details

Date Published: 14 July 2000
PDF: 8 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391428
Show Author Affiliations
Benjamin Daniel Klein, Univ. of Illinois/Urbana-Champaign (United States)
Karl Hess, Univ. of Illinois/Urbana-Champaign (United States)
Dennis G. Deppe, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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