Share Email Print

Proceedings Paper

Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers
Author(s): Yongsang Cho; Woo-Young Choi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

Paper Details

Date Published: 14 July 2000
PDF: 9 pages
Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); doi: 10.1117/12.391419
Show Author Affiliations
Yongsang Cho, Yonsei Univ. (South Korea)
Woo-Young Choi, Yonsei Univ. (South Korea)

Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?