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Proceedings Paper

Noncontact broadband microwave material characterization at low and high temperatures
Author(s): K. A. Jose; Vasundara V. Varadan; Richard D. Hollinger; Anikumar R. Tellakula; Vijay K. Varadan
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Paper Abstract

In this paper, we present a unique approach to wide frequency band high/low temperature dielectric characterization of materials from 8.0 GHz to 110 GHz and the temperature range from -40 to 1500 degree(s)C. Using a HP 8510 XF single connection, single sweep network analyzer along with 3 pairs of spot focused horn lens antennas, it is possible to perform broad band in-situ and real time dielectric characterization of materials. Presently all other methods restrict the measurements either to narrow frequency bands due to sensor/applicator restrictions or difficulties with accurate sample preparation for different frequency bands. This method, based on a microwave beam focused to a measurement plane, is non-contact, so it can be easily adapted for measurements in high temperature and hostile environments. Frequency dependence of the complex dielectric properties of a number of common samples are measured as a function of temperature and frequency, and compared with existing data. This approach can be easily adapted for process monitoring that involves very high or very low temperatures.

Paper Details

Date Published: 6 July 2000
PDF: 8 pages
Proc. SPIE 4129, Subsurface Sensing Technologies and Applications II, (6 July 2000); doi: 10.1117/12.390629
Show Author Affiliations
K. A. Jose, The Pennsylvania State Univ. (United States)
Vasundara V. Varadan, The Pennsylvania State Univ. (United States)
Richard D. Hollinger, HVS Technologies, Inc. (United States)
Anikumar R. Tellakula, HVS Technologies, Inc. (United States)
Vijay K. Varadan, The Pennsylvania State Univ. (United States)

Published in SPIE Proceedings Vol. 4129:
Subsurface Sensing Technologies and Applications II
Cam Nguyen, Editor(s)

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