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Proceedings Paper

Microwave properties of the thermal metal-semiconductor transition of the polyaniline-VO2 composites
Author(s): L. Hachet; Ph. Roduit; H. de Chanterac; N. Belhadj-Tahar; Arlette Fourrier-Lamer
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Paper Abstract

The purpose of this paper is to report the experimental results on polyaniline-VO2 composites in the 45MHz-18GHz frequencies range versus temperature and VO2 mass concentration. The temperature dependence studied by classical heating and courant pulse and the percolation phenomena study have been carried out in both the semi- conductor state and metallic state. The VO2 metallic oxide is remarkable through a reversible discontinuity of the electric conductivity which can reach five orders of magnitude at a transition temperature generally located at 68 degree(s)C. This transition is associated with the modification from crystal structure VO2 which passes from a quadratic structure (metal state) to a monoclinic structure (semiconductor state) at the temperature Tt. The powder of VO2 sintered in an induction oven. VO2 was dispersed in a matrix of basic polyaniline, with mass rates of 10%, 30%, 50%, 70% and 90% of vanadium oxide. The strong dynamics of the composites beyond the threshold authorizes the use of a current to induce the temperature within the sample. The simulation of multi-layer of Jauman type, with commendable reflection and transmission in the frequencies range 8-12GHz will be shown.

Paper Details

Date Published: 30 June 2000
PDF: 9 pages
Proc. SPIE 4097, Complex Mediums, (30 June 2000);
Show Author Affiliations
L. Hachet, Supelec (France)
Ph. Roduit, Supelec (France)
H. de Chanterac, Univ. Pierre et Marie Curie (France)
N. Belhadj-Tahar, Supelec (France)
Arlette Fourrier-Lamer, Supelec (France)

Published in SPIE Proceedings Vol. 4097:
Complex Mediums
Akhlesh Lakhtakia; Werner S. Weiglhofer; Russell F. Messier, Editor(s)

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