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Proceedings Paper

Actinic defect counting statistics over 1-cm2 area of EUVL mask blank
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Paper Abstract

As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm2 of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.

Paper Details

Date Published: 21 July 2000
PDF: 10 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390080
Show Author Affiliations
Seongtae Jeong, Lawrence Berkeley National Lab. (United States)
Chih-wei Lai, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Christopher C. Walton, Lawrence Livermore National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. and Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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