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Proceedings Paper

Chemically amplified resists for electron-beam projection lithography mask fabrication
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Paper Abstract

A positive tone chemically amplified (CA) resist, Shipley UVIIITM, has been investigated for use in the fabrication of scattering electron-beam projection lithography (EPL) masks. Shipley UVIII is a DUV resist that also functions as a high resolution (sub 75 nm) e-beam resist with sensitivities of 12 - 30 (mu) C/cm2 at 75 keV depending upon the bake parameters, and is currently used in the manufacture of advanced x-ray masks with 90 nm feature sizes. This paper discusses the issues associated with the implementation of CARs in EPL mask processing, including the thermal variations and mechanical distortions which can cause nonuniformities during resist processing. The performance of the resist was evaluated based on critical dimension (CD) uniformity across the mask and within individual membranes, image placement (IP) performance within an individual membrane, and image quality. CD uniformity of less than 15 nm 3 (sigma) has been achieved across the mask (approximately 50 X 50 mm area) and less than 10 nm 3 (sigma) has been achieved intramembrane (1.1 X 12.1 mm area), for 400 nm nominal feature sizes in resist. Pattern transfer etch processes for a TaSi scatter layer have also been developed.

Paper Details

Date Published: 21 July 2000
PDF: 8 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390064
Show Author Affiliations
Christopher Magg, IBM Microelectronics Div. (United States)
Michael J. Lercel, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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