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Proceedings Paper

Nikon EB stepper: its system concept and countermeasures for critical issues
Author(s): Kazuaki Suzuki; Tomoharu Fujiwara; Kazunari Hada; Noriyuki Hirayanagi; Shintaro Kawata; Kenji Morita; Kazuya Okamoto; Teruaki Okino; Sumito Shimizu; Takehisa Yahiro
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Paper Abstract

The imaging concept of electron projection lithography (EPL) with silicon stencil reticle is explained. A silicon membrane thickness of 1 - 4 micrometer is suitable for the reticle. A scattering contrast of greater than 99% is expected. Nikon EB stepper's dynamic writing strategy of discrete exposure on a sub-field by sub-field basis with deflection control of the electron beam is explained. The basic system configuration of EB stepper is introduced. Examples of error budget for CD variation and Overlay/Stitching are shown. Nikon's policy for countermeasures for critical issues such as proximity effect correction, sub-field/complementary stitching and wafer heating influence are explained. For extensibility down to 70 nm and below, both exposure tool and reticle should be improved.

Paper Details

Date Published: 21 July 2000
PDF: 11 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390057
Show Author Affiliations
Kazuaki Suzuki, Nikon Corp. (Japan)
Tomoharu Fujiwara, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Noriyuki Hirayanagi, Nikon Corp. (Japan)
Shintaro Kawata, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazuya Okamoto, Nikon Corp. (Japan)
Teruaki Okino, Nikon Corp. (Japan)
Sumito Shimizu, Nikon Corp. (Japan)
Takehisa Yahiro, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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