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Proceedings Paper

Characterization of a novel double-gas-jet laser plasma EUV source
Author(s): Rene de Bruijn; Andrzej Bartnik; H. F. Fledderus; Henryk Fiedorowicz; Petra Hegeman; Raluca C. Constantinescu; Fred Bijkerk
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Paper Abstract

A novel laser plasma EUV source geometry based on a (pulsed) double gas jet system has been characterized for utilization in EUV Lithography. The use of a secondary annular jet of a buffer gas in conjunction with the primary jet of target gas provides a considerable gain in EUV yield of an order of magnitude. The best CE data at 12.8 nm were obtained using xenon as target gas and hydrogen as buffer gas. The plasma source was driven using a short-wavelength KrF laser (0.9 J, 27 ns). Conversion efficiencies (CE) and EUV pulse shapes have been measured using calibrated Mo/Si multilayer mirrors and filtered junction diodes. A pinhole camera, equipped with a back illuminated CCD camera, was used to determine the plasma size in a wavelength range from 6 - 16 nm.

Paper Details

Date Published: 21 July 2000
PDF: 5 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390050
Show Author Affiliations
Rene de Bruijn, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)
Andrzej Bartnik, Military Univ. of Technology (Poland)
H. F. Fledderus, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)
Henryk Fiedorowicz, Military Univ. of Technology (Poland)
Petra Hegeman, Philips Research Labs. (Netherlands)
Raluca C. Constantinescu, Philips Research Labs. (Netherlands)
Fred Bijkerk, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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