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Proceedings Paper

Demagnification by bias in proximity x-ray lithography
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Paper Abstract

The ability to produce fine features using X-ray proximity lithography is controlled predominantly by diffraction and photoelectron blur. The diffraction manifests itself as feature 'bias.' The classical approach is to attempt to minimize the bias; that is, to print features which are 1:1 images of those on the mask. However, bias can also be exploited to print features smaller than those on the mask. This demagnification-by-bias technique can be optimized with respect to mask-wafer gap and resist processing, and can provide reductions of 3X to 6X. Demagnification offers many of the same advantages as projection optical lithography in terms of critical dimension control: relaxed mask features CD. In addition, it provides a very large 'depth of focus' and wide dose latitude. In consequence proximity X-ray lithography is extendible to feature sizes below 25 nm, taking advantage of comparatively large mask features (> 0.1 nm) and large gaps (10 -25 micrometer). The method was demonstrated for demagnification values down to X3.5. To produce DRAM half- pitch fine features techniques such as multiple exposures with a single development step are proposed.

Paper Details

Date Published: 21 July 2000
PDF: 8 pages
Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); doi: 10.1117/12.390044
Show Author Affiliations
Kong Jong Ren, National Univ. of Singapore (Singapore)
Quinn J. Leonard, Univ. of Wisconsin/Madison (United States)
Yuli Vladimirsky, JMAR Research, Inc. (United States)
Antony J. Bourdillon, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3997:
Emerging Lithographic Technologies IV
Elizabeth A. Dobisz, Editor(s)

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