Proceedings Paper
Simulation-based proximity correction in high-volume DRAM production| Format | Member Price | Non-Member Price |
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Paper Abstract
Simulation-based optical proximity correction (OPC) is applied to print the gate level of a state-of-the-art, high- volume DRAM technology. Using 248 nm lithography, critical structures down to 170nm are printed.
Paper Details
Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389078
Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389078
Show Author Affiliations
Werner Fischer, Infineon Technologies AG (Germany)
Ines Anke, Infineon Technologies Dresden GmbH & Co. (Germany)
Ines Anke, Infineon Technologies Dresden GmbH & Co. (Germany)
Giorgio Schweeger, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)
Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)
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