Advanced lithographic techniques such as phase shift masks (PSM) and optical proximity correction (OPC) result in a more complex mask design and technology. With shrinking feature sizes, the topography of the mask becomes more and more important. We compare diffraction spectra, aerial images and resist profiles, which result for rigorous simulations were performed with a time-domain finite- difference algorithm. Consequences with respect to process linearity, mask error factor, printability of small assist features in OPC and phase defects in PSM will be discussed.

Date Published: 5 July 2000
PDF: 11 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389060

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)