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Proceedings Paper

Mask error factor impact on the 130-nm node
Author(s): John N. Randall; Christopher C. Baum; Keeho Kim; Mark E. Mason
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Paper Abstract

The aggressive schedule for downscaling of gate dimensions and need for tight CD control for the 130nm node has created the need to seriously consider the use of a Levenson phase shift mask with 248nm lithography tools. The improvements in exposure latitude and depth of focus of strong phase shift over binary patterning are well known and have been clearly demonstrated. What is less well understood is the impact of the mask error factor.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389049
Show Author Affiliations
John N. Randall, Texas Instruments Inc. (United States)
Christopher C. Baum, Texas Instruments Inc. (United States)
Keeho Kim, Texas Instruments Inc. (United States)
Mark E. Mason, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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