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Proceedings Paper

Understanding the impact of full-field mask error factor
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Paper Abstract

Deep-UV lithography using 248 and 193-nm light will be the microlithography technology of choice for the manufacturing of advanced memory and logic semiconductor devices for the next decade. Since 193nm lithography development has been slow, the extension of 248nm technology to 0.150micrometers and beyond has accelerated. Advanced techniques, such as Optical Proximity Correction and phase shift masks will be needed in order to maintain sufficient process latitude. This continuous reduction of k1 to near ½ wavelength has intensified and issues related to MEF have become a concern. MEF, a phenomenon first discussed by Maurer et al., is define as the CD Error at wafer level divided by the CD Error at reticle level multiplied by the lens magnification. There have been numerous publications discussing the im pact of MEF on CD budgets for line space and contact imaging. This paper will discuss recent work to investigate full field MEF, the impact on choice of illumination conditions and how photoresist can significantly influence MEF. Data based on simulation and experiment was collected with high numerical aperture 248 nm imaging using binary reticles with conventional illumination.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389047
Show Author Affiliations
Will Conley, Motorola (United States)
Xuelong Shi, Motorola (United States)
Matt Hankinson, KLA-Tencor Corp. (United States)
Mircea V. Dusa, ASML MaskTools (United States)
Robert John Socha, ASML MaskTools (United States)
Cesar Garza, Lucent Technologies (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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