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Proceedings Paper

Practical optical-proximity-correction approach by considering interlayer overlap
Author(s): Byoung-Il Choi; Andrew Khoh
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Paper Abstract

Pattern fidelity has always been the key consideration in optical proximity corrections. However, it is equally important that overlap of underlying or overlying contact or via meets the requirements given in design rules. The normal OPC approach of minimizing the edge placement error with respect to the corresponding mask patterns may not give sufficient overlap over contact and via. A new OPC approach is proposed. The new approach considers tow parameters for optimization - edge placement errors of printed edge with respect to corresponding mask patterns, and overlap of the layer over contact and/or via. An evaluation is done by applying OPC, with normal approach and with the new OPC, to metal 1 of a 64M SRAM cell. Pattern fidelity of metal 1 and overlap of metal 1 over contact and via are compared. Results show that the new OPC approach gives both good pattern fidelity and improved overlap over contact and via. The only drawback is the significantly higher run time, due largely to the printing of resist images for overlap analysis.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389022
Show Author Affiliations
Byoung-Il Choi, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Andrew Khoh, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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