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Proceedings Paper

Analytic approach to understanding the impact of mask errors on optical lithography
Author(s): Chris A. Mack
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Paper Abstract

The characterization of the MEEF for a variety of feature types under a variety of processing conditions is presented. Analytic expressions for the aerial image MEEF under simple incoherent and coherent illumination conditions are derived, including the effect of defocus. Eros in processing, such as focus and exposure errors, also affect the value of the MEEF. Thus, another approach to evaluating the impact of mask errors is to look at the reduction in the process window caused by these errors. Using simulation, a study of the impact of mask CD errors on the overlapping process windows is presented and used as the basis for realistic mask CD specifications.

Paper Details

Date Published: 5 July 2000
PDF: 13 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389011
Show Author Affiliations
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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