Share Email Print

Proceedings Paper

Progress in 157-nm lithography development at Intel: resists and reticles
Author(s): Veena Rao; Eric M. Panning; Ling Liao; John M. Hutchinson; Andrew Grenville; Susan M. Holl; Don Bruner; Raghu Balasubramanian; Ronald Kuse; Giang T. Dao; Jun-Fei Zheng; Kevin J. Orvek; Joseph C. Langston; Fu-Chang Lo
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Intel is aggressively pursuing the use of 157 nm lithography for the 0.1 mm patterning node. Two areas of concentration have been in photoresist and reticle materials development. Over the six months, we have seen considerable progress in new materials development in both areas. In the photoresist area, the use of ultra-thin resists of currently used chemistries appear to be capable of providing short-term layer development and tool testing patterning capability. We have obtained imaging results using a 0.5 NA Schwartzchild optics system. Our best result to data show 70-80 nm lines printed on a pitch of 180 nm. While this small field system has considerably immature optics, it can be used effectively to do basic resist development. In the area of reticle materials development, we have seen considerable improvement in the reduction of OH in blank materials, resulting in higher transmission. We expect to see substrates with greater than 80 percent transmission within the next year at the current rate of accelerated progress. Furthermore, we are not seeing any major processing differences with these new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and new blank materials. Overall, we have seen an accelerated pace of learning in materials development for both resist and reticle materials for 157 nm lithography.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389005
Show Author Affiliations
Veena Rao, Intel Corp. (United States)
Eric M. Panning, Intel Corp. (United States)
Ling Liao, Intel Corp. (United States)
John M. Hutchinson, Intel Corp. (United States)
Andrew Grenville, Intel Corp. (United States)
Susan M. Holl, Intel Corp. (United States)
Don Bruner, Intel Corp. (United States)
Raghu Balasubramanian, Intel Corp. (United States)
Ronald Kuse, Intel Corp. (United States)
Giang T. Dao, Intel Corp. (United States)
Jun-Fei Zheng, Intel Corp. (United States)
Kevin J. Orvek, Intel Corp. (United States)
Joseph C. Langston, Intel Corp. (United States)
Fu-Chang Lo, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?