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Proceedings Paper

Development of 157-nm small-field and mid-field microsteppers
Author(s): Ron E. Miller; Paul M. Bischoff; Roger C. Sumner; Stephen W. Bowler; Warren W. Flack; Galen Fong
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Paper Abstract

The continuos advancement of optical lithography into the regime of sub-100nm patterning capability requires the utilization of shorter exposure wavelengths such as 157nm. This in turn requires modifications in lens performance and stepper body performance. Advances in index homogeneity have made it possible to develop 157nm lens systems suitable for investigating sub-100nm lithography. Recent advances in the transmission of modified fused silica as a reticle material have made it more desirable to pursue 157nm lithography tools. MicroSteppers are a necessary vehicle to obtain photoresist and process information pertaining to the efficacy of this technology for production at the 100nm and 70nm device nodes.

Paper Details

Date Published: 5 July 2000
PDF: 12 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388998
Show Author Affiliations
Ron E. Miller, Ultratech Stepper, Inc. (United States)
Paul M. Bischoff, Ultratech Stepper, Inc. (United States)
Roger C. Sumner, Ultratech Stepper, Inc. (United States)
Stephen W. Bowler, Ultratech Stepper, Inc. (United States)
Warren W. Flack, Ultratech Stepper, Inc. (United States)
Galen Fong, Ultratech Stepper, Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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