Share Email Print

Proceedings Paper

Feasibility of highly line-narrowed F2 laser for 157-nm microlithography
Author(s): Alexander I. Ershov; Thomas P. Duffey; Eckehard D. Onkels; William N. Partlo; Richard L. Sandstrom
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Highly line-narrowed F2 laser operation in the VUV has been achieved for the first time by means of a master oscillator/power amplifier laser design. Different concepts have ben investigated experimentally for the master oscillator (MO) in order to obtain narrowband spectra. The diffraction grating based design showed to be limited to a FWHM of approximately 0.4 pm. The spectral FWHM of the MO could be further reduced to below 0.3 pm with a double etalon-based resonator. Single pass amplification was employed to increase the beam energy density of the beam up to 50 mJ/cm2. The spectral FWHM of the amplified light is slightly larger than the FWHM of the correspondent MO radiation, indicating saturation and/or inhomogeneous broadening of the F2 amplifier medium. Experimental data obtained from broadband operation and ASE measurements suggests that the free running bandwidth of F2 lasers result form spectral gain-narrowing of the laser medium.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388992
Show Author Affiliations
Alexander I. Ershov, Cymer, Inc. (United States)
Thomas P. Duffey, Cymer, Inc. (United States)
Eckehard D. Onkels, Cymer, Inc. (United States)
William N. Partlo, Cymer, Inc. (United States)
Richard L. Sandstrom, Cymer, Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

© SPIE. Terms of Use
Back to Top