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Proceedings Paper

Advanced F2 lasers for microlithography
Author(s): Klaus Vogler; Uwe Stamm; Igor Bragin; Frank Voss; Sergei V. Govorkov; Gongxue Hua; Juergen Kleinschmidt; Rainer Paetzel
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Paper Abstract

According to the SIA-Roadmap, the 157 nm wavelength of the F2 laser emission will be used for chip production with critical dimensions of 100 nm down tot eh 70 nm node. Currently al basic technologies for 157 nm lithography are under investigation and development at material suppliers, coating manufacturers, laser suppliers, lens and tool manufacturers, mask houses, pellicle manufacturers, and resist suppliers.

Paper Details

Date Published: 5 July 2000
PDF: 14 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388991
Show Author Affiliations
Klaus Vogler, Lambda Physik GmbH (Germany)
Uwe Stamm, Lambda Physik GmbH (Germany)
Igor Bragin, Lambda Physik GmbH (Germany)
Frank Voss, Lambda Physik GmbH (Germany)
Sergei V. Govorkov, Lambda Physik, Inc. (United States)
Gongxue Hua, Lambda Physik, Inc. (United States)
Juergen Kleinschmidt, Lambda Physik GmbH (Germany)
Rainer Paetzel, Lambda Physik GmbH (Germany)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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