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Proceedings Paper

Extending the performance of KrF laser for microlithography by using novel F2 control technology
Author(s): Paolo Zambon; Mengxiong Gong; Jason Carlesi; Gunasiri G. Padmabandu; Mike Binder; Ken Swanson; Palash P. Das
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Paper Abstract

Exposure tools for 248nm lithography have reached a level of maturity comparable to those based on i-line. With this increase in maturity, there is a concomitant requirement for greater flexibility from the laser by the process engineers. Usually, these requirements pertain to energy, spectral width and repetition rate. By utilizing a combination of laser parameters, the process engineers are often able to optimize throughput, reduce cost-of-operation or achieve greater process margin. Hitherto, such flexibility of laser operation was possible only via significant changes to various laser modules. During our investigation, we found that the key measure of the laser that impacts the aforementioned parameters is its F2 concentration. By monitoring and controlling its slope efficiency, the laser's F2 concentration may be precisely controlled. Thus a laser may tune to operate under specifications as diverse as 7mJ, (Delta) (lambda) FWHM < 0.3 pm and 10mJ, (Delta) (lambda) FWHM < 0.6pm and still meet the host of requirements necessary for lithography. We discus this new F2 control technique and highlight some laser performance parameters.

Paper Details

Date Published: 5 July 2000
PDF: 10 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388984
Show Author Affiliations
Paolo Zambon, Cymer, Inc. (United States)
Mengxiong Gong, Cymer, Inc. (United States)
Jason Carlesi, Cymer, Inc. (United States)
Gunasiri G. Padmabandu, Cymer, Inc. (United States)
Mike Binder, Cymer, Inc. (United States)
Ken Swanson, Cymer, Inc. (United States)
Palash P. Das, Cymer, Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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