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Proceedings Paper

Comparison between 2-phase-shifting mask and 3-phase-shifting mask on application of printing low-duty-ratio contact array patterning
Author(s): Kuei-Chun Hung; Benjamin Szu-Min Lin; Hsien-an Chang; Alex Tseng; Lien-Sheng Chung; WeiJyh Liu; Der-Yuan Wu; Peter Huang
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Paper Abstract

In this study, 2PSM and 3PSM are implemented to print low- duty-ratio self-aligned contact plugs. The simulation and experimental results demonstrate that 2PSM has larger process windows than 3PSM. One of the advantages of 2PSM is no asymmetric defocus effect, which is caused by the phase difference of 3PSM and reduces the process window of 3PSM. Defocus-dependent shape distortion in the case of 3PSM is not found in the case of 2PSM, either. Different illumination conditions have been investigated to determine the best illumination condition for 2PSM in terms of large common process window besides less x-y distortion. Optimum illumination parameters and suitable scattering bars can minimize pattern distortion.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388974
Show Author Affiliations
Kuei-Chun Hung, United Silicon Inc. (Taiwan)
Benjamin Szu-Min Lin, United Microelectronics Corp. (Taiwan)
Hsien-an Chang, United Silicon Inc. (Taiwan)
Alex Tseng, United Silicon Inc. (Taiwan)
Lien-Sheng Chung, United Silicon Inc. (Taiwan)
WeiJyh Liu, United Silicon Inc. (Taiwan)
Der-Yuan Wu, United Microelectronics Corp. (Taiwan)
Peter Huang, United Silicon Inc. (Taiwan)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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