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Proceedings Paper

Phase aware proximity correction for advanced masks
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Paper Abstract

In this paper we describe the use of sparse aerial image simulation coupled with process simulation, using the variable threshold resist (VTR) model, to do optical and process proximity correction (OPC) on phase shift masks (PSM). We will describe the OPC of PSM, including attenuated PSM, clear field PSM, and double exposure PSM. We will explain the method used to perform such OPC and show examples of critical dimension control improvements generated from such a technique. Simulations, PSM assignment and model based OPC corrections are performed with Calibre Workbench, Calibre DRC, Calibre PSMgate and Calibre OPCpro tools from Mentor Graphics. In conclusion we will show that PSM techniques need to be corrected by a phase aware proximity correction tool in order to achieve both pattern fidelity as well as small feature size on the wafer in a production environment.

Paper Details

Date Published: 5 July 2000
PDF: 11 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388972
Show Author Affiliations
Olivier Toublan, Mentor Graphics Corp. (United States)
Emile Y. Sahouria, Mentor Graphics Corp. (United States)
Nicolas B. Cobb, Mentor Graphics Corp. (United States)
Thuy Do, Mentor Graphics Corp. (United States)
Tom Donnelly, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)
Franklin M. Schellenberg, Mentor Graphics Corp. (United States)
Patrick Schiavone, France Telcom-CNET (France)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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