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Proceedings Paper

Manufacturability of 248-nm phase-shift lithography for 100-nm transistors
Author(s): Mark E. Mason; John N. Randall; Keeho Kim
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Paper Abstract

The timing of 193nm tools and the resist to support them is driving semiconductor manufacturers to plan for production of sub-half lambda features on 248nm exposure tools. Lithographers are turning to reticle enhancements to close the capability gap, finding that there are a myriad of issues that must be addressed to achieve production- worthiness.

Paper Details

Date Published: 5 July 2000
PDF: 13 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388971
Show Author Affiliations
Mark E. Mason, Texas Instruments Inc. (United States)
John N. Randall, Texas Instruments Inc. (United States)
Keeho Kim, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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