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Proceedings Paper

Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling
Author(s): Christoph M. Friedrich; Leonhard Mader; Andreas Erdmann; Steffen List; Ronald L. Gordon; Christian K. Kalus; Uwe A. Griesinger; Rainer Pforr; Josef Mathuni; Guenther G. Ruhl; Wilhelm Maurer
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Paper Abstract

This paper describes mask topography effects of alternating phase shift masks for DUV lithography. First two options to achieve intensity balancing are discussed. Global phase errors of +/- 10 degrees cause a CD change of 3 nm and 8 nm CD placement errors. The CD placement appears to be the parameter affected most by phase errors. A sloped quartz edge with an angle of 3 degrees causes a CD change of 10 nm. The CD sensitivity on local phase errors, i.e. quartz bumps or holes was also studied. The critical defect size of a quartz bump was seen to be 150 nm for 150 nm technology. For the investigation the recently developed topography simulator T-mask was used. The simulator was first checked against analytical tests and experimental results.

Paper Details

Date Published: 5 July 2000
PDF: 13 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000);
Show Author Affiliations
Christoph M. Friedrich, Infineon Technologies AG (Germany)
Leonhard Mader, Infineon Technologies AG (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Circuits (Germany)
Steffen List, Sigma-C (Germany)
Ronald L. Gordon, Motorola (United States)
International SEMATECH (United States)
Christian K. Kalus, Sigma-C (Germany)
Uwe A. Griesinger, Infineon Technologies AG (Germany)
Rainer Pforr, Infineon Technologies AG (Germany)
Josef Mathuni, Infineon Technologies AG (Germany)
Guenther G. Ruhl, Infineon Technologies AG (Germany)
Wilhelm Maurer, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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