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Proceedings Paper

Simulation-based method for sidelobe supression
Author(s): Christoph Dolainsky; Paul Karakatsanis; Fritz Gans; Rainer Pforr; Joerg Thiele
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Paper Abstract

We present a new method of sidelobe suppressor placement based on fast lithographic simulation. Experimental results of printing 0.18 micron contact holes using a 5.5 percent transmittance attenuated phase shift mask with different settings of partial coherency are shown. Very asymmetric side lobes appear in some of these results. To explain these experimental results simulations were performed that take koma lens aberrations into account. A good agreement between experiment and simulation can be obtained them, Using these simulations a new algorithm has been implemented to place absorbing assist pattern for sidelobe suppression suitable in size and position. Then the process window of a double contact was determined using aerial image simulation. Process windows with koma lens aberrations and different settings of the partial coherency are then compared.

Paper Details

Date Published: 5 July 2000
PDF: 7 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388952
Show Author Affiliations
Christoph Dolainsky, aiss GmbH (Germany)
Paul Karakatsanis, aiss GmbH (Germany)
Fritz Gans, Infineon Technologies AG (Germany)
Rainer Pforr, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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