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Proceedings Paper

Lithography process cost considerations for 120-nm groundrules
Author(s): Bernhard Liegl; Christian Summerer
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Paper Abstract

In the near future semiconductor manufacturing will continue to push minimum feature sizes towards and below dimensions of a tenth of a micron. The lithographic patterning process is particularly challenged to support this trend with an every-higher optical resolution. A variety of resolution enhancing technologies are currently developed to encounter this challenge. Processes with decreased wavelength, techniques using strong phase shifting and thin film imaging will compete in terms of optical performance and process cost-of-ownership over the next few years. This paper compares cost-of-ownership of major lithography options for memory wafer structuring at 120nm ground rules or below. ArF lithography, alternating phase shift masks and multi-layer resist techniques are the selected candidates for a process cost analysis. Their cost-of-ownership relevant characteristics are identified and quantified with focus on consistency. This is the basis for a cost analysis and will support a constructive discussion about process feasibility.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388932
Show Author Affiliations
Bernhard Liegl, Infineon Technologies Inc. (United States)
Christian Summerer, Infineon Technologies Inc. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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