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Proceedings Paper

Effect of surfactant-added developer on development of the chemically amplified photoresist
Author(s): Satoshi Kawada; Yukio Tamai; Shunkichi Omae; Tadahiro Ohmi
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Paper Abstract

We have investigated effects of surfactant on the wettability of developer to chemically amplified resists and dissolution characteristics of the resists. The results show that surfactants enhance the wettability of developer to the resists. However, surfactant-added developer,in the case of positive resists, caused higher dissolution rate of unexposed and less exposed regions. The degree of higher dissolution rate also depends upon the molecular structure of surfactant. We have found the specific molecular structure of surfactant to improve the wettability without causing higher dissolution of unexposed and less exposed regions: Ester bonding for a tertiary butyloxycarbonyl (t-Boc) type and an acetal type of chemically amplified resist, and the alkylphenyl structure for an annealing type of resist. In the case of negative resist, the dissolution rate was not changed by addition of surfactant to developer. We have clarified that the suitable combination of surfactant and positive resist is required to utilize to the maximum the advantages of the surfactant addition, wettability improvement and volume reduction of developer.

Paper Details

Date Published: 23 June 2000
PDF: 9 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388358
Show Author Affiliations
Satoshi Kawada, Tohoku Univ. (Japan)
Yukio Tamai, Tohoku Univ. (Japan)
Shunkichi Omae, Tohoku Univ. (Japan)
Tadahiro Ohmi, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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