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Proceedings Paper

Manipulation of chemically amplified resist dissolution rate behavior for improved performance
Author(s): Medhat A. Toukhy; Karin R. Schlicht; Brian Maxwell; Somboun Chanthalyma
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Paper Abstract

The properties of the PAG and the type of the blocking group combined with the process temperature affect the slope of the dissolution rate curves within the critical lithographic area of the curve significantly. The location of the steepest dissolution rate switching and the photospeed of the resist are primarily a function of the PAG type and base ratio. The resist inhibition is largely influenced by the blocking level of the polymer. The total phenolic (OH) content of de-blocked polyhydroxystyrene (PHS) based resist systems is the only parameter that affects their maximum dissolution rate (Rmax).

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388349
Show Author Affiliations
Medhat A. Toukhy, Arch Chemicals, Inc. (United States)
Karin R. Schlicht, Arch Chemicals, Inc. (United States)
Brian Maxwell, Arch Chemicals, Inc. (United States)
Somboun Chanthalyma, Arch Chemicals, Inc. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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