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Proceedings Paper

New materials for 157-nm photoresists: characterization and properties
Author(s): Michael K. Crawford; Andrew E. Feiring; Jerald Feldman; Roger H. French; Mookkan Peri Periyasamy; Frank L. Schadt III; Robert J. Smalley; Fredrick C. Zumsteg Jr.; Roderick R. Kunz; Veena Rao; Ling Liao; Susan M. Holl
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Paper Abstract

The design of an organic material satisfying all of the requirements for a single layer photolithography resist at 157 nm is a formidable challenge. All known resists used for optical lithography at 193 nm or longer wavelengths are too highly absorbing at 157 nm to be used at film thicknesses greater than approximately 90 nm. Our goal has been to identify potential, new photoresist platforms that have good transparency at 157 nm (thickness normalized absorbance of 2.5 micrometer-1 or less), acceptable plasma etch resistance, high Tg and compatibility with conventional 0.26 N tetramethylammonium hydroxide developers. We have been investigating partially fluorinated resins and copolymers containing transparent acidic groups as potential 157 nm photoresist binders; a variety of material with promising initial sets of properties (transparency, etch resistance, solubility in aqueous TMAH) have been identified. Balancing these properties with imaging performance, however, remains a significant challenge.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388319
Show Author Affiliations
Michael K. Crawford, DuPont Central Research & Development (United States)
Andrew E. Feiring, DuPont Central Research & Development (United States)
Jerald Feldman, DuPont Central Research & Development (United States)
Roger H. French, DuPont Central Research & Development (United States)
Mookkan Peri Periyasamy, DuPont iTechnologies (United States)
Frank L. Schadt III, DuPont iTechnologies (United States)
Robert J. Smalley, DuPont Central Research & Development (United States)
Fredrick C. Zumsteg Jr., DuPont Central Research & Development (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Veena Rao, Intel Corp. (United States)
Ling Liao, Intel Corp. (United States)
Susan M. Holl, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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