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Proceedings Paper

Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists
Author(s): Pushkara Rao Varanasi; Kathleen M. Cornett; Margaret C. Lawson
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Paper Abstract

In our attempts to develop etch resistance 248 nm positive resists, we have designed and synthesized thermally stable and acid sensitive methylbenzyl ether (MBE) protected poly(hydroxystyrene) derivatives. Results presented in this paper clearly illustrate that the MBE protecting group provides superior etch resistance to conventional carbonate, ester and acetal/ketal based protecting groups. It is also shown that the MBE protecting group is thermally stable and undergoes acid catalyzed deprotection leading to preferential rearrangement products due to electrophilic ring substitution. Such a rearrangement is shown to provide a unique mechanism to reduce/eliminate resist shrinkage and improve lithographic performance.

Paper Details

Date Published: 23 June 2000
PDF: 6 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388316
Show Author Affiliations
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Kathleen M. Cornett, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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