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Proceedings Paper

Line-edge roughness of chemically amplified resists
Author(s): Tsukasa Azuma; Kenji Chiba; Maki Imabeppu; Daisuke Kawamura; Yasunobu Onishi
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Paper Abstract

Aerial image contrast dependence of line edge roughness (LER) in 130 nm equal line and space resist patterns was investigated using chemically amplified resists on organic bottom antireflective coatings both for KrF imaging and for ArF imaging. The chemically amplified ArF resist exhibiting high transparency both at 248 nm and at 193 nm was found to resolve 130 nm equal line and space resist patterns both on the KrF imaging systems and on the ArF imaging system using an identical binary mask set. Average roughness measurement data derived from top-down scanning electron microscopic images of the 130 nm equal line and space resist patterns indicated that the LER decreased with increasing the aerial image contrast, varying with the wavelengths of illumination light sources and the illumination conditions. It was, however, found that the LER in the chemically amplified resist optimized for the ArF imaging system was 1.9 - 2.3 times larger than those in the chemically amplified resists optimized for the KrF imaging systems, in spite of the fact that the aerial image contrast of the ArF imaging system was 1.5 - 2.5 times higher than those of the KrF imaging systems.

Paper Details

Date Published: 23 June 2000
PDF: 6 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388310
Show Author Affiliations
Tsukasa Azuma, Toshiba Corp. (Japan)
Kenji Chiba, Toshiba Corp. (Japan)
Maki Imabeppu, Toshiba Corp. (Japan)
Daisuke Kawamura, Toshiba Corp. (Japan)
Yasunobu Onishi, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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