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Proceedings Paper

Lithography and line-edge roughness of high-activation-energy resists
Author(s): Seiya Masuda; Xiaoming Ma; G Noya; Georg Pawlowski
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Paper Abstract

Lithographic performance and line-edge roughness (LER) of several experimental high activation energy resists containing hydroxystyrene-co-styrene-co-t-butylmethacrylate terpolymers have been determined as a function of illumination conditions, polymer, photoacid generator and quencher composition, as well as process variations. Important lithographic properties, such as iso/dense bias, exposure latitude, may deteriorate upon minimization of LER. LER is largely affected by the changes of the optical settings, while material and process influences are less pronounced.

Paper Details

Date Published: 23 June 2000
PDF: 12 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388309
Show Author Affiliations
Seiya Masuda, Clariant (Japan) K.K. (Japan)
Xiaoming Ma, Clariant (Japan) K.K. (Japan)
G Noya, Clariant (Japan) K.K. (Japan)
Georg Pawlowski, Clariant (Japan) K.K. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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