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Proceedings Paper

Utilizing in-line CD SEMs for intensive field mapping
Author(s): Margaret S. Fyfield; George E. Bailey; Waiman Ng; Mohsen Ahmadian
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Paper Abstract

With the large field sizes scanners offer today, lens mapping (dense across-the-field CD measurements to quantify illumination and coherency aberrations) requires an extensive number of line width measurements to be taken for accurate lens evaluation. There are concerns that the accuracy required for field mapping may not be possible with a Top-Down SEM, pushing the industry to move to electrical CD (ECD) measurement. However, the etch process required for ECD can induce systematic error, either from the iso-dense etch bias or from the equipment itself. This paper explores the capability of utilizing an in-line CD SEM for extensive CD measurement collection and the requirements to achieve statistically valid data for lens mapping.

Paper Details

Date Published: 2 June 2000
PDF: 7 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386522
Show Author Affiliations
Margaret S. Fyfield, LSI Logic Corp. (United States)
George E. Bailey, LSI Logic Corp. (United States)
Waiman Ng, KLA-Tencor Corp. (United States)
Mohsen Ahmadian, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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