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Proceedings Paper

Application of optical proximity correction in manufacturing and its effect on process control
Author(s): Christine Wallace; Claire Duncan; Brian Martin
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Paper Abstract

Optical proximity correction in terms of linewidth correction at different pitches is used to demonstrate improvement in critical dimension control at the polysilicon layer of a sub- half-micron CMOS process. Further measurements across the image field show the effect on wafer linewidth distributions of different generations of the laser write tool used in reticle manufacturing.

Paper Details

Date Published: 2 June 2000
PDF: 8 pages
Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); doi: 10.1117/12.386521
Show Author Affiliations
Christine Wallace, Mitel Semiconductor (France)
Claire Duncan, Mitel Semiconductor (United Kingdom)
Brian Martin, Mitel Semiconductor (United Kingdom)


Published in SPIE Proceedings Vol. 3998:
Metrology, Inspection, and Process Control for Microlithography XIV
Neal T. Sullivan, Editor(s)

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