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Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa2Cu3O7-X/YSZ/(1012)Al2O3 and YBa2Cu3O7-X/CeO2/(1012)Al2O3
Author(s): Oleg A. Khymenko; Gennadii A. Melkov; Volodymyr S. Melnikov; Olena I. Okhay
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Paper Abstract

The growth of mainly c-axis oriented YBa2Cu3O7-x thin films on a YSZ and CeO2 buffer layers deposited on the R-plane sapphire substrates was investigated. Both films were grown by a pulsed laser deposition technique from the multi-component targets by in- situ successive target changing during deposition. The structure and compositional properties were studied by X-ray diffraction and pulsed laser spectroscopy, respectively. The electrical resistance and the surface impedance were measured by a four-probe DC-method and by the H011 mode of a high-Q copper cavity at 135 GHz, respectively. A Tc is congruent to 86 K and (Delta) Tc is congruent to 4.1 K and Rs is congruent to 680 mOhm at 20 K for YBa2Cu3O7-x thin films with YSZ buffer layer and Tc is congruent to 88.8 K with (Delta) Tc is congruent to 1.7 K and Rs is congruent to 105 mOhm at 20 K for YBa2Cu3O7-x thin films with CeO2 buffer layer were obtained by an research conditions of deposition for both films. Comparison of the films characteristics grown on sapphire substrates without any buffer layer showed a good perspective of the discussed technique for large area YBa2Cu3O7-x thin films and multi-layer structures growth on sapphire too.

Paper Details

Date Published: 17 May 2000
PDF: 10 pages
Proc. SPIE 3941, Combinatorial and Composition Spread Techniques in Materials and Device Development, (17 May 2000); doi: 10.1117/12.385418
Show Author Affiliations
Oleg A. Khymenko, State Research Ctr. Fonon (Ukraine)
Gennadii A. Melkov, T. Shevchenka Univ. (Ukraine)
Volodymyr S. Melnikov, Institute of Geochemistry and Mineralogy (Ukraine)
Olena I. Okhay, State Research Ctr. Fonon (Ukraine)

Published in SPIE Proceedings Vol. 3941:
Combinatorial and Composition Spread Techniques in Materials and Device Development
Ghassan E. Jabbour, Editor(s)

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