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Proceedings Paper

Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates
Author(s): Guilhem Almuneau; Eric M. Hall; Shigeru Nakagawa; Jin K. Kim; Larry A. Coldren
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Paper Abstract

The characterization of 1.55 micrometer room temperature (RT) electrically pumped monolithic vertical cavity surface emitting lasers (VCSELs) on InP is reported. By combining high refractive index-contrast AlGaAsSb/AlAsSb distributed Bragg mirrors (DBRs) and Esaki-junction-based active region, these results demonstrate that VCSELs operating at 1.55 micrometer and employing a reasonable number of mirror periods can be grown in a single epitaxial step. Regarding our first results with the same type of structure, some improvements have been achieved on the threshold current density (approximately equals 1 kA/cm2), and on the voltage drop in the DBRs. We also present in this paper the thermal conductivity of the As- Sb materials measured on both bulk layers and DBR stacks. The main performance-limiting factor appears to be the combination between the low thermal conduction of the quaternary alloys lattice-matched to InP, and the high energy-band offset between the high- and the low-index materials.

Paper Details

Date Published: 1 May 2000
PDF: 9 pages
Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); doi: 10.1117/12.384360
Show Author Affiliations
Guilhem Almuneau, Univ. of California/Santa Barbara (United States)
Eric M. Hall, Univ. of California/Santa Barbara (United States)
Shigeru Nakagawa, Univ. of California/Santa Barbara (United States)
Jin K. Kim, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 3946:
Vertical-Cavity Surface-Emitting Lasers IV
Kent D. Choquette; Chun Lei, Editor(s)

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