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Proceedings Paper

Synthesis of Er3+-doped silicon-based light emitting material by sol-gel method
Author(s): Datao Xie; X. G. Wang; Y. Z. Xu; JinGuang Wu; Guang-Xian Xu
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Paper Abstract

We suggested a new synthesis process, the sol-gel method, to incorporate high concentration of Er3+ ions into the silicate film on silicon substrate. The coating solutions with uniformly dispersed metal ions were prepared from Er(NO)3 solution, Si(OC2H5)4 and ethanol. Spin coating was carried out into a treated mono-crystalline silicon (100) substrate, at a speed of about 4000-rpm for 8s. The precursor films were annealed in air at 500 degree(s)C for 2 hours. Er-related approximately 1.54 micrometers photoluminescence was observed at room temperature. The optimal doped concentrations of Er3+ in SiO2 film was estimated at about approximately 1021/cm3. Through characterizations of AFM, FTIR, DTA, TG and EXAFS, we found that: the synthesized film is compact and smooth in microscope; 500 degree(s)C annealing is enough to perform the structure change of gel to glass; and, the Er-O formed complex with coordinate number of 9. Because of the formation of Er-O complex, Er-O-Si can form the next structure in the synthesized film. The configuration could not only increase the optical activity of ions, but also improve the homogeneous of Er3+ ions in SiO2. Thus we demonstrated the sol-gel process is an efficient way to overcome the quench effect of concentration and increase the distribution quality.

Paper Details

Date Published: 13 April 2000
PDF: 6 pages
Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); doi: 10.1117/12.382871
Show Author Affiliations
Datao Xie, Peking Univ. (China)
X. G. Wang, Inner Mongolia Normal Univ. (China)
Y. Z. Xu, Peking Univ. (China)
JinGuang Wu, Peking Univ. (China)
Guang-Xian Xu, Peking Univ. (China)

Published in SPIE Proceedings Vol. 3942:
Rare-Earth-Doped Materials and Devices IV
Shibin Jiang, Editor(s)

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