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Proceedings Paper

Photoluminescence characterization of Er3+ -implanted silica thin films containing Si nanocrystals
Author(s): Constantinos E. Chryssou; Anthony J. Kenyon; T. S. Iwayama; D. E. Hole; Christopher W. Pitt
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Paper Abstract

Si nanocrystals (nc-Si) embedded in silica have recently attracted a lot of attention as a potential optoelectronic material due to their light emission at approximately 1.7 eV. Er3+ is attractive because its 1.53 micrometers emission coincides with the low attenuation region of silica optical fibers. In this paper, we report the experimental investigation of energy transfer between nc-Si and Er3+ in ion implanted material which may relax requirements on the Er3+ pump source and lead to broad-band pumped optical devices.

Paper Details

Date Published: 13 April 2000
PDF: 9 pages
Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); doi: 10.1117/12.382846
Show Author Affiliations
Constantinos E. Chryssou, Univ. College London (United Kingdom)
Anthony J. Kenyon, Univ. College London (United Kingdom)
T. S. Iwayama, Aichi Univ. of Education (Japan)
D. E. Hole, Univ. of Sussex (United Kingdom)
Christopher W. Pitt, Univ. College London (United Kingdom)

Published in SPIE Proceedings Vol. 3942:
Rare-Earth-Doped Materials and Devices IV
Shibin Jiang, Editor(s)

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