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Proceedings Paper

Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode
Author(s): C. H. Hwang; Kuang-Yu Hsieh; H. S. Huang; Li-Wei Tu
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Paper Abstract

The optical property and microstructure of InGaN/GaN MQW before and after annealed has been investigated by using photoluminescence (PL) and Transmission Electron Microscope (TEM) technique. The photoluminescence intensity of InGaN/GaN MQW LED annealed within AlN powder can be enhanced by 5 times compared with the as-grown one. The diffused Al converted the InGaN/GaN into AlGaN/InGaN. Less dislocation density in the annealed film and more carrier collection ability due to the band gap difference between InGaN/GaN and InGaN/AlGaN can be applied to explain the astonished result. This simple process can improve the optical property of GaN/InGaN QW LED without spending heavy cost in thin film growth.

Paper Details

Date Published: 17 April 2000
PDF: 7 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382821
Show Author Affiliations
C. H. Hwang, National Sun Yat-sen Univ. (Taiwan)
Kuang-Yu Hsieh, National Sun Yat-sen Univ. (Taiwan)
H. S. Huang, Military Acadamy/Kaohsiung (Taiwan)
Li-Wei Tu, National Sun Yat-sen Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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