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Proceedings Paper

Gain switching of GaInN MQW laser diodes
Author(s): Claudio Marinelli; Igor Y. Khrushchev; Judy M. Rorison; Richard V. Penty; Ian H. White; T. Takeuchi; Hiroshi Amano; Isamu Akasaki; Y. Kaneko; Satoshi W. Watanabe; Norihide Yamada; Ghulam Hasnain; Richard P. Schneider Jr.; Shih-Yuan Wang; Michael R. T. Tan
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Paper Abstract

A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths less than or equal to 40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.

Paper Details

Date Published: 17 April 2000
PDF: 8 pages
Proc. SPIE 3938, Light-Emitting Diodes: Research, Manufacturing, and Applications IV, (17 April 2000); doi: 10.1117/12.382817
Show Author Affiliations
Claudio Marinelli, Univ. of Bristol (United Kingdom)
Igor Y. Khrushchev, Univ. of Bristol (United Kingdom)
Judy M. Rorison, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)
T. Takeuchi, Meijo Univ. (Japan)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)
Y. Kaneko, Agilent Technologies (Japan)
Satoshi W. Watanabe, Agilent Technologies (Japan)
Norihide Yamada, Agilent Technologies (Japan)
Ghulam Hasnain, Agilent Technologies (United States)
Richard P. Schneider Jr., Agilent Technologies (United States)
Shih-Yuan Wang, Agilent Technologies (United States)
Michael R. T. Tan, Agilent Technologies (United States)

Published in SPIE Proceedings Vol. 3938:
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
H. Walter Yao; Ian T. Ferguson; E. Fred Schubert, Editor(s)

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