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Proceedings Paper

Thermal effects in multiple-pass p-i-n photodiodes
Author(s): David G. Cooper; John B. Medberry; Keith I. Williams
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Paper Abstract

Photonic links operating in the 1.55 micrometers erbium gain band are finding their way into an increasing variety of microwave applications. At present, the performance of high power photonic links is limited by the characteristics of the photodetector. For microwave links at 1.55 micrometers , the most successful photodetector architectures have been implementations of surface-illuminated, InGaAs p-i-n photodiodes. One photodetector design issue has been the tradeoff between microwave bandwidth, responsivity, and maximum average DC current. Low bandwidth photodiodes, for example, can be operated at a few GHz with average currents on the order of 50 mA, but are typically constructed with illuminated diameters on the order of 50 micrometers or more. By contrast, high-responsivity photodetectors with bandwidths on the order of 20 GHz are restricted to diameters of around 25 micrometers , and limited to 20 mA average current. It would be beneficial to extend the current capability of 20 GHz photodetectors to the 100-mA range.

Paper Details

Date Published: 19 April 2000
PDF: 12 pages
Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); doi: 10.1117/12.382176
Show Author Affiliations
David G. Cooper, Naval Research Lab. (United States)
John B. Medberry, Naval Research Lab. (United States)
Keith I. Williams, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 3950:
Optoelectronic Integrated Circuits IV
Yoon-Soo Park; Ray T. Chen, Editor(s)

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