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Proceedings Paper

Advancements in electro-absorption modulated sources for DWDM
Author(s): Leonard J. P. Ketelsen
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Paper Abstract

The electro-absorption modulated 1.55 micrometers DFB laser (EML) represents the first III-V optoelectronic integrated circuit in high volume production. The dominance of this device in dense wavelength division multiplexed telecommunications system is testimony to the advancements made in III-V fabrication technology and demonstration that OEIC's are no longer solely of academic interest. The intensed demand for higher bandwidth telecommunications systems is now pushing the EML device toward increased functionality and hence higher levels of integration. The need for wavelength selectable capability is the most prominent of these thrusts. In this talk we review the current state-of-the-art in single frequency EML technology and present design and performance results of an advanced wavelength selectable EML structure.

Paper Details

Date Published: 19 April 2000
PDF: 11 pages
Proc. SPIE 3950, Optoelectronic Integrated Circuits IV, (19 April 2000); doi: 10.1117/12.382158
Show Author Affiliations
Leonard J. P. Ketelsen, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3950:
Optoelectronic Integrated Circuits IV
Yoon-Soo Park; Ray T. Chen, Editor(s)

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