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Proceedings Paper

GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy
Author(s): Mira Misra; Anand V. Sampath; E. Iliopoulos; Theodore D. Moustakas
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Paper Abstract

Vertical geometry Schottky barrier photodiodes have been fabricated on n-GaN films grown by molecular beam epitaxy (MBE). Vertical mesas were fabricated by RIE and Schottky barriers were achieved by depositing Ni/Pt/Au metal contacts. I-V measurements show near ideal diode behavior, with reverse saturation current density of 1 X 109 A/cm2. Doping concentration and barrier height were determined to be 9 X 1016 cm-3 and 1.0V respectively, using C-V measurements. The diodes were then evaluated as UV photodiodes. The responsivity was measured to be 0.18A/W, corresponding to a quantum efficiency of 70 percent. Spectral response showed a sharp transition at 365 nm, and more than five orders of magnitude visible light rejection. Low frequency noise measurements indicate that 1/f noise is the dominant source of noise. The detectivity was determined to be 1.3 X 10-9 W/Hz1/2.

Paper Details

Date Published: 13 April 2000
PDF: 8 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382135
Show Author Affiliations
Mira Misra, Boston Univ. (United States)
Anand V. Sampath, Boston Univ. (United States)
E. Iliopoulos, Boston Univ. (United States)
Theodore D. Moustakas, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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