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Proceedings Paper

Electrical properties of AlxGa1-xN materials for UV photodetector applications
Author(s): Adam W. Saxler
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Paper Abstract

In this paper, recent developments in the electrical characterization and doping of AlxGa1-xN will be reviewed. The properties important for the development of solar-blind UV photodetectors will be stressed. For many of the military and commercial applications of UV photodetectors, the photodetectors must be solar-blind with cutoff wavelengths of less than about 280 nm. This means that for devices is that for devices based on the AlxGa1-xN system, the aluminum mole fraction for the active region is nearly 40 percent. One of the implications for devices is that as the energy gap is increased, doping becomes much more difficult. Therefore, one of the main thrusts of this paper will be the p-type and n-type doping of AlxGa1-xN. In addition to the study of the doping of bulk-like AlxGa1-xN, the use of AlxGa1-xN based superlattices to reduce the dopant ionization energy will be presented. Because GaN is likely to be used for contact layers in solar-blind devices and as an active layer in visible-blind devices, the electrical properties of this better studied binary material will be reported. The role of electrically active defects and unintentional dopants will also be discussed.

Paper Details

Date Published: 13 April 2000
PDF: 12 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382134
Show Author Affiliations
Adam W. Saxler, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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