As the IR technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger an pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well IR photodetectors is presented.

Date Published: 13 April 2000
PDF: 14 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382128

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)