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Proceedings Paper

Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range
Author(s): Hooman Mohseni; Joseph S. Wojkowski; Abbes Tahraoui; Manijeh Razeghi; Gail J. Brown; W. C. Mitchel
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Paper Abstract

Growth and characterization of type-II detectors for mid-IR wavelength range is presented. The device has a p-i-n structure is designed to operate in the non-equilibrium mode with low tunneling current. The active layer is a short period InAs/GaSb superlattice. Wider bandgap p-type AlSb and n-type InAs layers are used to facilitate the extraction of both electronics and holes from the active layer for the first time. The performance of these devices were compared to the performance of devices grown at the same condition, but without the AlSb barrier layers. The processed devices with the AlSb barrier show a peak responsivity of about 1.2A/W with Johnson noise limited detectivity of 1.1 X 1011 cm X Hz1/2/W at 8 micrometers at 80 K at zero bias. The details of the modeling, growth, and characterizations will be presented.

Paper Details

Date Published: 13 April 2000
PDF: 8 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382114
Show Author Affiliations
Hooman Mohseni, Northwestern Univ. (United States)
Joseph S. Wojkowski, Northwestern Univ. (United States)
Abbes Tahraoui, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
W. C. Mitchel, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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