We report a set of high-quality InAs/InGaSb type-II photodetectors grown on GaSb substrates with cutoff wavelengths form 11 to 21 micrometers . The SL structural parameters were very repeatable between samples as evidenced by the consistency of the SL periods and the long wavelength photoresponse cut-off. The measured photoresponse spectra were in excellent agreement with the calculated absorption spectrum. Very low background carrier concentrations were achieved in this samples set. Based on the study, the optimum growth temperature for type-II photodetectors is between 390 to 410 C with a post growth annealing at 495 to 510 C. Thickness non-uniformity of type-II photodiodes was less than 1 percent across 2-inch wafers. We have also demonstrated photodetectors with good performance from 10 to 18 micrometers , directly grown on compliant InGaAs/GaAs substrates.

Date Published: 13 April 2000
PDF: 12 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382112

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)