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Proceedings Paper

High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers
Author(s): ZunTu Xu; Jing-Ming Zhang; Xiaoyu Ma; Guowen Yang; Guangdi Shen; Lianhui Chen
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Paper Abstract

980 nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers with novel large optical cavity and asymmetrical claddings was fabricated by MOCVD. Very high differential quantum efficiency of 90% (1.15 W/A) and low vertical divergence angle of 24 degree(s) at long cavity length were obtained for 100 micrometers stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 micrometers .

Paper Details

Date Published: 18 April 2000
PDF: 4 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382108
Show Author Affiliations
ZunTu Xu, Institute of Semiconductors (China)
Jing-Ming Zhang, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Guowen Yang, Institute of Semiconductors (United States)
Guangdi Shen, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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