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Proceedings Paper

High-power optically pumped type-II QW lasers grown on GaAs compliant substrate
Author(s): Stefan J. Murry; Jun Zheng; Chau-Hong Kuo; C.H. Thompson Lin; Han Q. Le; Shin Shem Pei
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Paper Abstract

The first demonstration of an epi-down mounted type-II optically pumped (OP) mid-infrared (IR) laser grown on an InGaAs-GaAs bonded substrate is reported. The device consisted of 60 periods of InAs/InGaSb/InAs/AlSb quantum wells, and was mounted epi-side down on a Cu heat sink. The InGaAs-GaAs bonded substrate allowed the device to be pumped from the substrate side of the laser with a 980 nm diode laser array. The laser emitted at 4.6-micrometers at 80 K, and peak power output was 300-mW per (uncoated) facet for 10 microsecond(s) pulses, and 200-mW per facet for 500-microsecond(s) pulse duration, 500-Hz-repetition rate. For comparison, a low- filled-factor mid-IR OP laser grown on a GaSb substrate was also studied. This device ((lambda) equals 3.67 micrometers ) showed improved external quantum efficiency (approximately 26%) compared with previously type-II OP lasers, and high peak output power (> 0.45 W per facet 500-microsecond(s) pulse).

Paper Details

Date Published: 18 April 2000
PDF: 8 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382092
Show Author Affiliations
Stefan J. Murry, Univ. of Houston and Applied Opotoelectronics, Inc. (United States)
Jun Zheng, Univ. of Houston (United States)
Chau-Hong Kuo, Univ. of Houston and Applied Optoelectronics, Inc. (United States)
C.H. Thompson Lin, Univ. of Houston and Applied Optoelectronics, Inc. (United States)
Han Q. Le, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)

Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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