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Proceedings Paper

Nonlinear optics of semiconductors near the half band gap
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Paper Abstract

Semiconductors below the half band gap exhibit higher bond- electronic, off-resonant nonlinearities compare to silica fibers. They also exhibit low scattering losses, negligible two-photon absorption, and no linear absorption. Furthermore, due to the mature fabrication technology many complicated device designs can be easily fabricated. Thus, this material system offers unique opportunity to observe and test novel nonlinear phenomena and devices. In this paper, we will review the nonlinear optical properties of AlGaAs waveguides near the half band gap.

Paper Details

Date Published: 28 March 2000
PDF: 12 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381474
Show Author Affiliations
Jin Ung Kang, Johns Hopkins Univ. (United States)
Alain Villeneuve, Univ. Laval (Canada)
J. Stewart Aitchison, Univ. of Glasgow (United Kingdom)
George I. Stegeman, CREOL/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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